Award Abstract # 9860740
SBIR Phase I: Growth of CdGeAs2 Single Crystals by the Czochralski Technique

NSF Org: TI
Translational Impacts
Recipient: INRAD OPTICS, INC.
Initial Amendment Date: December 4, 1998
Latest Amendment Date: December 4, 1998
Award Number: 9860740
Award Instrument: Standard Grant
Program Manager: Darryl G. Gorman
TI
 Translational Impacts
TIP
 Directorate for Technology, Innovation, and Partnerships
Start Date: January 1, 1999
End Date: June 30, 1999 (Estimated)
Total Intended Award Amount: $99,766.00
Total Awarded Amount to Date: $99,766.00
Funds Obligated to Date: FY 1999 = $99,766.00
History of Investigator:
  • Dan Perlov (Principal Investigator)
    dperlov@inrad.com
Recipient Sponsored Research Office: INRAD, Inc.
181 LEGRAND AVE
NORTHVALE
NJ  US  07647-2404
(201)767-1910
Sponsor Congressional District: 05
Primary Place of Performance: INRAD, Inc.
181 LEGRAND AVE
NORTHVALE
NJ  US  07647-2404
Primary Place of Performance
Congressional District:
05
Unique Entity Identifier (UEI): HWMBNYNGLSL3
Parent UEI: HWMBNYNGLSL3
NSF Program(s): SBIR Phase I
Primary Program Source: app-0199 
Program Reference Code(s): 1775, 9163, AMPP
Program Element Code(s): 537100
Award Agency Code: 4900
Fund Agency Code: 4900
Assistance Listing Number(s): 47.084

ABSTRACT

9860740
This Small Business Innovation Research (SBIR)Phase I project aims to develop a new approach for the growth of CdGeAs2 single crystals. CdGeAs2 has outstanding optical nonlinear properties. Its nonlinear optical coefficient is the highest among all known crystals, it is transmissive from 2-3 to 18 um and it has a relatively high thermal conductivity. It is therefore, a material of choice for the generation of tunable laser radiation in the infrared. Although the optical transmission of CdGeAs2 can be improved by after-growth treatments, we propose to grow CdGeAs2 single crystals by the Czochralski technique to achieve high uniformity and optical transmission in the as-grown state.
High quality and lower cost CdGeAs2 single crystals will make possible powerful infrared laser sources tunable from 4 to 11 um. Such sources will have numerous commercial applications including defense countermeasure systems, communication systems, remote sensing of contaminants in the atmosphere and infrared spectroscopy.

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