NSF Org:	DMR Division Of Materials Research
Recipient:	UNIVERSITY OF TENNESSEE
Initial Amendment Date:	August 19, 1997
Latest Amendment Date:	May 6, 1999
Award Number:	9705406
Award Instrument:	Continuing Grant
Program Manager:	LaVerne D. Hess DMR  Division Of Materials Research MPS  Directorate for Mathematical and Physical Sciences
Start Date:	September 1, 1997
End Date:	April 30, 2001 (Estimated)
Total Intended Award Amount:	$420,000.00
Total Awarded Amount to Date:	$420,000.00
Funds Obligated to Date:	FY 1997 = $140,000.00 FY 1998 = $140,000.00 FY 1999 = $140,000.00
History of Investigator:	E. Ward Plummer (Principal Investigator) wplummer@phys.lsu.edu Chih-Kang Shih (Co-Principal Investigator) Qian Niu (Co-Principal Investigator) Phillip Sprunger (Co-Principal Investigator) Zhenyu Zhang (Co-Principal Investigator)
Recipient Sponsored Research Office:	University of Tennessee Knoxville 201 ANDY HOLT TOWER KNOXVILLE TN  US  37996-0001 (865)974-3466
Sponsor Congressional District:	02
Primary Place of Performance:	University of Tennessee Knoxville 201 ANDY HOLT TOWER KNOXVILLE TN  US  37996-0001
Primary Place of Performance Congressional District:	02
Unique Entity Identifier (UEI):	FN2YCS2YAUW3
Parent UEI:	LXG4F9K8YZK5
NSF Program(s):	METALS, CERAMICS, & ELEC MATRS, METAL & METALLIC NANOSTRUCTURE, ELECTRONIC/PHOTONIC MATERIALS
Primary Program Source:	app-0197  app-0198  app-0199
Program Reference Code(s):	1589, 1771, 1775, 9161, AMPP
Program Element Code(s):	171500, 177100, 177500
Award Agency Code:	4900
Fund Agency Code:	4900
Assistance Listing Number(s):	47.049

ABSTRACT

9705406 Plummer This FRG proposal addresses, experimentally and theoretically, basic materials science issues in a collaborative program involving researchers at four universities and ORNL, combining expertise and facilities to explore a new concept in epitaxy, an "electronic growth" mechanism. Within this mechanism the critical thickness for the formation of an atomically flat film corresponds to the thickness where the two-dimensional electronic system can be confined in a potential well between the vacuum and the substrate. This magic film thickness depends on the nature of quantum well states, that is, the overall arrangement of atoms is dictated by the preference of electrons to occupy certain quantum-mechanical states. Special resources made available jointly for this project include high resolution photo-emission, surface x-ray scattering, scanning probe microscopy, high resolution inelastic electron scattering, and super computing equipment. The proposed research emphasizes understanding of fundamental mechanisms and processes through a combination of theoretical and experimental studies. %%% The project addresses forefront materials science research issues in a topical area of materials science having high technological relevance. The research will contribute basic materials science knowledge at a fundamental level to important aspects of metal-semiconductor interfaces critical to electronic/photonic devices and integrated circuitry, in general. Additionally, the fundamental knowledge and understanding gained from the research is expected to contribute to improving the performance of advanced devices and circuits by providing a fundamental understanding and a basis for designing and producing improved materials and structures for the quantum mechanical devices of the future. The research program may lead to a new paradigm for metal heteroepitaxy, which is of significance in the fabrication of electronic devices and microelectronics circuitry. ***

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