Award Abstract # 9527576
Sensor-Integrated Control for Rapid Thermal Chemical Vapor Deposition (RTCVD)

NSF Org: EEC
Division of Engineering Education and Centers
Recipient: UNIVERSITY OF MARYLAND, COLLEGE PARK
Initial Amendment Date: September 27, 1995
Latest Amendment Date: September 27, 1995
Award Number: 9527576
Award Instrument: Standard Grant
Program Manager: John C. Hurt
EEC
 Division of Engineering Education and Centers
ENG
 Directorate for Engineering
Start Date: October 1, 1995
End Date: September 30, 1999 (Estimated)
Total Intended Award Amount: $550,000.00
Total Awarded Amount to Date: $550,000.00
Funds Obligated to Date: FY 1995 = $550,000.00
History of Investigator:
  • P. Krishnaprasad (Principal Investigator)
    krishna@isr.umd.edu
  • Wijesuriya Dayawansa (Co-Principal Investigator)
  • Evanghelos Zafiriou (Co-Principal Investigator)
  • Raymond Adomaitis (Co-Principal Investigator)
Recipient Sponsored Research Office: University of Maryland, College Park
3112 LEE BUILDING
COLLEGE PARK
MD  US  20742-5100
(301)405-6269
Sponsor Congressional District: 04
Primary Place of Performance: University of Maryland, College Park
3112 LEE BUILDING
COLLEGE PARK
MD  US  20742-5100
Primary Place of Performance
Congressional District:
04
Unique Entity Identifier (UEI): NPU8ULVAAS23
Parent UEI: NPU8ULVAAS23
NSF Program(s): ERC-Eng Research Centers
Primary Program Source: app-0195 
Program Reference Code(s): 0000, OTHR
Program Element Code(s): 148000
Award Agency Code: 4900
Fund Agency Code: 4900
Assistance Listing Number(s): 47.041

ABSTRACT

; R o o t E n t r y F W g C o m p O b j b W o r d D o c u m e n t O b j e c t P o o l 3 g 3 g - . / 0 1 2 3 4 5 6 7 F Microsoft Word 6.0 Document MSWordDoc Word.Document.6 ; 9527576 Krishnaprasad This award is the University of Maryland with a sub-contract to North Carolina State University at Raleigh. The overall goal of this effort is to demonstrate a methodology for sensor-integrated control of rapid thermal chemical vapor deposition (RTCVD) of polycrystalline silicon (poly Si) from silane with focus on controlling deposition thickness and across-wafer uniformity. The project exploits advances in real-time sensors, including pyrometry for temperature, thermal imaging for temperature uniformity, and sampling mass spectrometry for thickness metrology and process ambient monitoring. Reduced-order process models constructed from high fidelity heat and fluid flow simulations, together with physically-based dynamic equipment, process, and sensor simulations, are the basis for control models. Resulting run-to-run control methodologies for controlling deposition thickness and across-wafer uniformity are being developed and validated experimentally, and real-time control approaches are being explored. These run-to-run control approaches will be extendible to real-time c ontrol. An architecture to support a basic supervisory control component is being demonstrated, using physically-based dynamic simulation to determine sensor signatures of specific equipment failure modes, together with advanced algorithms as interference tools for detecting sensor signal correlations and identifying indicated equipment/process malfunction. The investigators at the University of Maryland provide the effort on simulation and control, while the investigators at North Carolina State University provide the effort on sensors and on rapid thermal chemical vapor deposition of polycrystalline silicon. The experimental proof of concept of the control system will be performed in the cluster tool deposition apparatus at North Carolina State University. *** 0 0 Oh +' 0 $ H l D h , \\CLM15\SMURPHY$\WWUSER\TEMPLATE\NORMAL.DOT S u m m a r y I n f o r m a t i o n ( , 9527576 SHERONDA MURPHY SHERONDA MURPHY @ X g @ @ X g @ Microsoft Word 6.0 2 ; e = e d d l l l l l l l 1 % D T G 9 l l l l l l l l l s 9527576 Krishnaprasad This award is the University of Maryland with a sub-contract to North Carolina State University at Raleigh. The overall goal of this effort is to demonstrate a methodology for sensor-integrated control of rapid thermal chemical vapor deposition (RTCVD) of polycrystalline silicon (poly Si) from silane with focus on controlling deposition thickness and across-wafer uniformity. The project exploits advances in real-time sensors, including pyrometry for temperature, thermal imaging for temperature uniformity, and sampling mass spectrometry for thickness metrology and process ambient monitoring. Reduced-order process models constructed from high fidelity heat and fluid flow simulations, together with physically-based dynamic equipment, process, and sensor simulations, are the basis for control models. Resulting run-to-run control methodologies for controlling deposition thickness and across-wafer uniformity are being developed and validated experimentally, and real-time control approaches are being explored. These run-to-run control approaches wi

Please report errors in award information by writing to: awardsearch@nsf.gov.

Print this page

Back to Top of page