Award Abstract # 8809779
Metalorganic Chemical Vapor Deposition (MOCVD) for III-V Optoelectronic Device Research

NSF Org: ECCS
Division of Electrical, Communications and Cyber Systems
Recipient: UNIVERSITY OF CALIFORNIA, SAN DIEGO
Initial Amendment Date: September 9, 1988
Latest Amendment Date: September 9, 1988
Award Number: 8809779
Award Instrument: Standard Grant
Program Manager: Sarah A. Clark
ECCS
 Division of Electrical, Communications and Cyber Systems
ENG
 Directorate for Engineering
Start Date: September 1, 1988
End Date: February 28, 1990 (Estimated)
Total Intended Award Amount: $30,000.00
Total Awarded Amount to Date: $30,000.00
Funds Obligated to Date: FY 1988 = $30,000.00
History of Investigator:
  • Paul Yu (Principal Investigator)
    yu@ece.ucsd.edu
Recipient Sponsored Research Office: University of California-San Diego
9500 GILMAN DR
LA JOLLA
CA  US  92093-0021
(858)534-4896
Sponsor Congressional District: 50
Primary Place of Performance: DATA NOT AVAILABLE
Primary Place of Performance
Congressional District:
Unique Entity Identifier (UEI): UYTTZT6G9DT1
Parent UEI:
NSF Program(s): EPMD-ElectrnPhoton&MagnDevices,
SPECIAL PROGRAMS-RESERVE
Primary Program Source:  
Program Reference Code(s): 1493
Program Element Code(s): 151700, 914500
Award Agency Code: 4900
Fund Agency Code: 4900
Assistance Listing Number(s): 47.041

ABSTRACT

This proposal is a Major Research Equipment Request for establishing a Metalorganic Chemical Vapor Deposition (MOCVD) facility at the University of California at San Diego (UCSD). The proposed facility will mainly provide advanced semiconductor materials for optoelectronic device and material research efforts at UCSD. The portion of the support from UCSD will be used for purchasing a basic MOCVD reactor, and the portion requested of NSF will be used to obtain the needed accessories to operate the reactor. These accessories include a vacuum pump with controlling system, a hydrogen purifier, a toxic gas monitor, and temperature baths to metalorganic sources. This proposal also describes various present and future III-V semiconductor optoelectronic device research projects that can be benefitted by this facility.

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