Award Abstract # 2332167
EAGER: Ultra Broadband Fully Integrated GaN Front End Integrated Chip

NSF Org: EES
Div. of Equity for Excellence in STEM
Recipient: FLORIDA A & M UNIVERSITY
Initial Amendment Date: September 15, 2023
Latest Amendment Date: September 15, 2023
Award Number: 2332167
Award Instrument: Standard Grant
Program Manager: Tyrslai Williams
tyrwilli@nsf.gov
 (703)292-8445
EES
 Div. of Equity for Excellence in STEM
EDU
 Directorate for STEM Education
Start Date: September 15, 2023
End Date: August 31, 2025 (Estimated)
Total Intended Award Amount: $300,000.00
Total Awarded Amount to Date: $300,000.00
Funds Obligated to Date: FY 2023 = $300,000.00
History of Investigator:
  • Bayaner Arigong (Principal Investigator)
    barigong@eng.famu.fsu.edu
Recipient Sponsored Research Office: Florida Agricultural and Mechanical University
1700 LEE HALL DR #201
TALLAHASSEE
FL  US  32307-0001
(850)599-3531
Sponsor Congressional District: 02
Primary Place of Performance: Florida Agricultural and Mechanical University
1500 WAHNISH WAY
TALLAHASSEE
FL  US  32307-3100
Primary Place of Performance
Congressional District:
02
Unique Entity Identifier (UEI): W8LKB16HV1K5
Parent UEI:
NSF Program(s): Hist Black Colleges and Univ
Primary Program Source: 04AC2324DB EDU DRSA DEFC AAB
Program Reference Code(s):
Program Element Code(s): 159400
Award Agency Code: 4900
Fund Agency Code: 4900
Assistance Listing Number(s): 47.076

ABSTRACT

The Historically Black Colleges and Universities - Undergraduate Program (HBCU-UP) provides support to strengthen STEM undergraduate education and research at HBCUs. This EArly-concept Grant for Exploratory Research (EAGER) expresses the need for innovative research activity in integrated chip design, fabrication, and validation at Florida A&M University (FAMU). The project focuses on the development of fully integrated GaN front end chips covering a wide spectrum. This work will be accomplished via investigation of a novel transversal filter type circuit topology to boost the efficiency of power amplification. The establishment of this research effort will further enhance the research capacity at FAMU in direct response to the CHIPS and Science Act.

The goal of this project is to develop a novel transversal filter type broadband distributed power amplifier, a wideband radio frequency switch, a low noise amplifier, a fully integrated solution, and novel packaging and set up of an experimental validation test bench for the proposed chip. Additionally, the project seeks to 1) develop a course for integrated chip design, fabrication, and validation, 2) develop a summer research program for undergraduate students, and 3) share the developed course materials with other HBCUs promoting the research activities in semiconductor, chip design, and experiment validation.

This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

Please report errors in award information by writing to: awardsearch@nsf.gov.

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