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Award Abstract # 1745143
EAGER: SAPPHIRE BASED INTEGRATED MICROWAVE PHOTONICS

NSF Org: ECCS
Division of Electrical, Communications and Cyber Systems
Recipient: UNIVERSITY OF ARKANSAS
Initial Amendment Date: July 24, 2017
Latest Amendment Date: July 24, 2017
Award Number: 1745143
Award Instrument: Standard Grant
Program Manager: Lawrence Goldberg
ECCS
 Division of Electrical, Communications and Cyber Systems
ENG
 Directorate for Engineering
Start Date: September 1, 2017
End Date: May 31, 2021 (Estimated)
Total Intended Award Amount: $250,917.00
Total Awarded Amount to Date: $250,917.00
Funds Obligated to Date: FY 2017 = $250,917.00
History of Investigator:
  • Samir El-Ghazaly (Principal Investigator)
    elghazal@uark.edu
  • Shui-Qing Yu (Co-Principal Investigator)
Recipient Sponsored Research Office: University of Arkansas
1125 W MAPLE ST STE 316
FAYETTEVILLE
AR  US  72701-3124
(479)575-3845
Sponsor Congressional District: 03
Primary Place of Performance: University of Arkansas
700 Research Center Blvd
Fayetteville
AR  US  72701-1201
Primary Place of Performance
Congressional District:
03
Unique Entity Identifier (UEI): MECEHTM8DB17
Parent UEI:
NSF Program(s): EPMD-ElectrnPhoton&MagnDevices
Primary Program Source: 01001718DB NSF RESEARCH & RELATED ACTIVIT
Program Reference Code(s): 100E, 7916, 9150
Program Element Code(s): 151700
Award Agency Code: 4900
Fund Agency Code: 4900
Assistance Listing Number(s): 47.041

ABSTRACT

Microwave photonics refers to a field that utilizes light as carrier to process high frequency electrical signals. It has shown great success in both defense and civilian applications. The future applications of microwave photonics demand a dramatic improve in performance while, in the same time, electronic devices should have more favorable features such as small size, lightweight, and low-power consumption. This project proposes to develop a new "Integrated Microwave Photonics chip" which could potentially integrate several functions of microwave photonic components on a single chip and also offer reduced size-weight-and-power at a very low cost. If successful, the developed technology would find tremendous applications in defense systems, such as Radar, and many civilian applications, such as cell phones, sensing, and datacom. The proposed research activities provide comprehensive training for graduate students in the areas of integrated photonics; semiconductor device design, simulation, fabrication, and characterization; as well as in preparation, analysis, interpretation, and dissemination of scientific data and results. The project will be used to recruit undergraduate honor students who may use certain aspects of this research for their thesis. A strong interaction plan with a local Historically Black Colleges and Universities/Minority Institution has been formed to inspire underrepresented minority students to participate research.


Integrated Microwave Photonics (IMWP) incorporates the functions of microwave-photonic components/subsystems in a monolithic or hybrid photonic chip, which offers reduced size-weight-and-power at a very low cost. This project proposes to utilize R-plane sapphire as a transformative, high-performance and self-consistent IMWP platform which provides a feasible approach for realizing fully-integrated MWP systems. The proposed approach enables the integration of complete sets of microwave and optical components such as light sources, analog and digital signal processing circuits, light detectors, control circuits, and Silicon on Sapphire (SOS) radio-frequency (RF) circuits all-in-one sapphire platform to achieve high-performance and low-cost mixed-signal optical links. Sapphire has a lower refractive index with an index difference of 0.3 with Si3N4. Therefore, it could leverage the mature Si3N4 low-loss waveguide technology to produce similar low-loss waveguide-based passive components by drop-in replacing quartz wafers with sapphire wafers. For RF applications, the sapphire platform has a potential to obtain much higher dynamic range due to low-loss optical waveguides while the competing Si-photonics platform combined with off-chip 1.55 micron laser suffers from the strong two-photon absorption and therefore has a limited dynamic range. As a transparent substrate, sapphire would enable a versatile 3-D photonics/electronics integration architecture. This project aims to, first, study the "feasibility" of the proposed approach by identifying and investigating key "fundamental challenges", then, conduct a proof-of-concept study to provide an effective route for overcoming the identified obstacles, and, eventually, provide a conclusive recommendation as to whether the proposed research is feasible. As a fully integrated solution to fundamentally address the most important technical challenge in IMWP, if successful, the new platform would find tremendous applications in defense systems, such as Radar signal processing, and many civilian applications. The broad wavelength coverage enables on-chip sensing applications. It could potentially replace the current Si-photonics for datacom and be used in harsh environments such as space and nuclear applications.

PUBLICATIONS PRODUCED AS A RESULT OF THIS RESEARCH

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Avval, Amirreza Ghadimi and El-Ghazaly, Samir M. "Distributed-Model-Based Approach for Electrical and Thermal Analysis of High-Frequency GaN HEMTs" IEEE Access , v.8 , 2020 https://doi.org/10.1109/ACCESS.2020.3017470 Citation Details
Bass, Jake A. and Brea, Brandon and Tran, Huong and Du, Wei and Soref, Richard and Yu, Shui-Qing and Reed, Graham T. and Knights, Andrew P. "The effect of two-photon absorption on the dynamic range of integrated microwave photonics links" Proceeding of Silicon Photonics , v.XV , 2020 10.1117/12.2546601 Citation Details
Kumar, Rahul and Saha, Samir K. and Kuchuk, Andrian and Maidaniuk, Yurii and de Oliveira, Fernando Maia and Yan, Qigeng and Benamara, Mourad and Mazur, Yuriy I. and Yu, Shui-Qing and Salamo, Gregory J. "GaAs layer on c-plane sapphire for light emitting sources" Applied Surface Science , v.542 , 2021 https://doi.org/10.1016/j.apsusc.2020.148554 Citation Details
Saha, Samir K. and Kumar, Rahul and Kuchuk, Andrian and Stanchu, Hryhorii and Mazur, Yuriy I. and Yu, Shui-Qing and Salamo, Gregory J. "GaAs epitaxial growth on R-plane sapphire substrate" Journal of Crystal Growth , v.548 , 2020 https://doi.org/10.1016/j.jcrysgro.2020.125848 Citation Details

PROJECT OUTCOMES REPORT

Disclaimer

This Project Outcomes Report for the General Public is displayed verbatim as submitted by the Principal Investigator (PI) for this award. Any opinions, findings, and conclusions or recommendations expressed in this Report are those of the PI and do not necessarily reflect the views of the National Science Foundation; NSF has not approved or endorsed its content.

This project proposed to utilize R-plane sapphire as a high-performance and self-consistent Integrated Microwave Photonics (IMWP) platform, which provides a feasible approach for realizing fully integrated microwave-photonics systems. The proposed approach is transformatively promising as it would enable the integration of complete sets of microwave and optical components, such as light sources, analog and digital signal-processing circuits, light detectors, CMOS control circuits, and Silicon on Sapphire (SOS) RF circuits all-in-one sapphire platform to achieve high-performance and low-cost mixed-signal optical links.

The research goals were accomplished through conducting the following research tasks: (1) Development of overall component architecture, (2) Feasibility study of growing GaAs on sapphire, (3) Development and design of optical waveguide for passive components, (4) Analysis of the RF-Optical Modulation Approaches, and (5) Feasibility analysis of the Overall Integrated-System Approach.

Examples of key technical accomplishments include:

(1) Growing III-V materials on the C-plane (Ultrathin GaAs buffer on c-plane Sapphire for Light Emitting Sources),

(2) Growing III-V materials on R-plane sapphire growth (GaAs Thin Film Growth on R-Plane Sapphire Substrate),

(3) Analyzing Two-Photon Absorption (TPA) in SOI waveguide (The Effect of Two-Photon Absorption on the Dynamic Range of Integrated Microwave Photonics Links),

(4) Studying the effects of TPA on SOI ring resonator, and

(5) Developing a Distributed-Model-Based Approach for Electrical and Thermal Analysis of High-Frequency GaN HEMTs.

This project has supported three Ph.D. students, one with emphasis on RF device modeling and the other two were trained on material growth and characterization. The students worked as a team with a focus on integrated photonics and device simulation and fabrication. During the active phase of the project, the training provided included: i) Device simulation training using commercial software  (such as  Silvaco), ii) Finite Element Analysis training using commercial software (COMSOL), iii) waveguide based device simulation training, iv) Cleanroom fabrication training specific for III-V material, and v) micro photoluminescence characterization for III-V on sapphire laser development.

This innovative and transformative research has resulted in two U.S. patent disclosures, two journal papers, and four conference publications.


Last Modified: 07/02/2021
Modified by: Samir El-Ghazaly

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