Award Abstract # 0548182
CAREER: Theory of Epitaxial-Oxide-Semiconductor Nanosystems

NSF Org: DMR
Division Of Materials Research
Recipient: UNIVERSITY OF TEXAS AT AUSTIN
Initial Amendment Date: August 21, 2006
Latest Amendment Date: July 20, 2010
Award Number: 0548182
Award Instrument: Continuing Grant
Program Manager: Daryl Hess
dhess@nsf.gov
 (703)292-4942
DMR
 Division Of Materials Research
MPS
 Directorate for Mathematical and Physical Sciences
Start Date: August 15, 2006
End Date: July 31, 2012 (Estimated)
Total Intended Award Amount: $400,000.00
Total Awarded Amount to Date: $400,000.00
Funds Obligated to Date: FY 2006 = $160,000.00
FY 2008 = $80,000.00

FY 2009 = $80,000.00

FY 2010 = $80,000.00
History of Investigator:
  • Alexander Demkov (Principal Investigator)
    demkov@physics.utexas.edu
Recipient Sponsored Research Office: University of Texas at Austin
110 INNER CAMPUS DR
AUSTIN
TX  US  78712-1139
(512)471-6424
Sponsor Congressional District: 25
Primary Place of Performance: University of Texas at Austin
110 INNER CAMPUS DR
AUSTIN
TX  US  78712-1139
Primary Place of Performance
Congressional District:
25
Unique Entity Identifier (UEI): V6AFQPN18437
Parent UEI:
NSF Program(s): CONDENSED MATTER & MAT THEORY
Primary Program Source: app-0106 
01000809DB NSF RESEARCH & RELATED ACTIVIT

01000910DB NSF RESEARCH & RELATED ACTIVIT

01001011DB NSF RESEARCH & RELATED ACTIVIT
Program Reference Code(s): 1045, 1187, 7237, 7574, 9161, AMPP
Program Element Code(s): 176500
Award Agency Code: 4900
Fund Agency Code: 4900
Assistance Listing Number(s): 47.049

ABSTRACT

TECHNICAL SUMMARY:
This CAREER award supports computational and theoretical research that aims to develop a theoretical framework for epitaxial-oxide-semiconductor nanosystems and education in computational materials research targeted on undergraduate and high-school students.
Crystalline epitaxial oxides on semiconductors (COS) open a new avenue for complementary metal oxide semiconductor (CMOS) technology utilizing materials other than Si, e.g. Ge or GaAs. Other applications of COS are at the end of the Si technology roadmap; the main advantage of a crystalline oxide is its epitaxial registry to the Si substrate that results in superior device performance by eliminating interfacial defects. COS combined with recently discovered epitaxial semiconductors on oxides (SOX) provides another set of exciting possibilities to explore.
The PI aims to develop a comprehensive theoretical framework for the emerging field of nanoscale epitaxial oxide semiconductor systems. The research focuses on fundamental problems in two areas:
1. Crystal growth of oxide-semiconductor and semiconductor-oxide systems.
2. "Tunability" of the electronic and transport properties of epitaxial oxide-semiconductor nanosystems.
The key to successful oxide-semiconductor heteroepitaxy is to achieve two-dimensional or Frank-Van der Merwe growth. In addition to lattice and thermal mismatch, the transition between fundamentally different types of bonding across the interface must be considered. The PI will investigate the use of intermetallic Zintl compounds as transition layers between ionic oxides and covalent semiconductors. The central idea is to exploit the intrinsic charge transfer in a Zintl compound to force the more electronegative metal to assume semi-covalent bonding which continues into the semiconductor. Two other key problems are the 90 twin domains caused by breaking of the symmetry across the interfaces (e.g. zinc-blende to perovskite), and step incommensurability between two materials. Relating the atomic geometry and electronic structure of the nanoassembly to its electrical properties, such as charge transfer and retention, will enable the PI to assess possible applications of these systems. The approach is based on ab-initio total energy methods and atomic-scale electron transport techniques that the PI has recently developed. The work will entail close collaboration with experimentalists in academia and industry.
To bring the excitement of practical theoretical nanoscience into undergraduate education, the PI plans to develop, improve, and enhance a new course entitled "Practicum on Computational Materials for Nanotechnology." This course will be offered to senior year students in Physics, Chemistry, Electrical Engineering, and Chemical Engineering. An outreach program aimed at attracting female high-school students to nanoscience will also be developed in collaboration with the Physics instructor at the LBJ Science Academy, a magnet high school with a large number of minority students. The PI aims to create an opportunity for female students to spend summers with the PI's research group to learn about computational nanoscience. This activity will be coordinated with a successful existing UTEACH program at UT.


NON-TECHNICAL SUMMARY:
This CAREER award supports computational and theoretical research that aims to develop a theoretical understanding of nanosystems and structures on semiconductor surfaces and education in computational materials research with a focus on undergraduates.
The PI will use advanced computational tools that start from the constituent atoms to study how oxide materials can be grown on the surfaces of semiconductors, with an emphasis on materials other than silicon, the current workhorse of the electronics industry. The PI will also study the electronic properties of the resulting nanosystems. The PI will focus on fundamental materials science and surface science problems. The work helps lay the theoretical foundations for semiconductor electronic devices with significantly higher performance and enhanced functionality as compared to current electronic device technology. The PI will also explore new phenomena that may arise in these unusual systems.
To bring the excitement of practical theoretical nanoscience into undergraduate education, the PI plans to develop, improve, and enhance a new course entitled "Practicum on Computational Materials for Nanotechnology." This course will be offered to senior year students in Physics, Chemistry, Electrical Engineering, and Chemical Engineering. An outreach program aimed at attracting female high-school students to nanoscience will also be developed in collaboration with the Physics instructor at the LBJ Science Academy, a magnet high school with a large number of minority students. The PI aims to create an opportunity for female students to spend summers with the PI's research group to learn about computational nanoscience. This activity will be coordinated with a successful existing UTEACH program at UT.



PUBLICATIONS PRODUCED AS A RESULT OF THIS RESEARCH

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(Showing: 1 - 10 of 23)
2.A. Posadas, M. Berg, H. Seo, D.J. Smith, H. Celio, A.P. Kirk, D. Zhernokletov, R.M. Wallace, A. de Lozanne, and A.A. Demkov "Strain-induced ferromagnetism in correlated oxide LaCoO3 epitaxially grown on Si (100)" Appl. Phys. Lett , 2011
A.A. Demkov, A. Posadas, H. Seo, J.K. Lee and N. Sai "Emerging physics of oxide heterostructures" phys. stat. solidi , 2011
A.A. Demkov, H. Seo, X. Zhang and J. Ramdani "Using Zintl-Klemm intermetallics in oxide-semiconductor heteroepitaxy" Appl. Phys. Lett , v.100 , 2012 , p.071602
A.A. Demkov, O. Sharia, and J. Lee "Theoretical analysis of high-k dielectric gate stacks" Microelectronics Engineering , v.84 , 2007 , p.2032
A.A. Demkov, O. Sharia, X. Luo, and J. Lee "Density functional theory of high-k dielectric gate stacks" Microelectronics Reliability , v.47 , 2007 , p.686
A. Posadas, M. Berg, H. Seo, D.J. Smith, H. Celio, A.P. Kirk, D. Zhernokletov, R.M. Wallace, A. de Lozanne, and A.A. Demkov "Strain-induced ferromagnetism in LaCoO3: Theory and growth on Si (100)" Microelectronics Engineering , 2011
A. Posadas, R. Dargis, M. Choi, A. Slepko, J.J. Kim, D.J. Smith, and A.A. Demkov "Formation of single-orientation epitaxial islands of TiSi2 on Si (001) using Sr passivation" J. Vac. Sci. Tech. , 2011
A. Rüegg, C. Mitra, A.A. Demkov, and G.A. Fiete "Electronic structure of (LaNiO3)2/(LaAlO3)N heterostructures grown along [111]" Phys. Rev. B , v.85 , 2012 , p.245131
A. Slepko, A.A. Demkov, W.I. Loh, P. Majhi, and G. Bersuker "Work function engineering in silicides: chlorine doping in NiSi" J. Appl. Phys. , 2011
C. Mitra, C. Lin, J. Robertson and A.A. Demkov "Electronic structure of oxygen vacancies in SrTiO3 and LaAlO3" Phys. Rev. B , v.86 , 2012 , p.155105
Demkov, AA; Sharia, O; Lee, JK "Theoretical analysis of high-k dielectric gate stacks" MICROELECTRONIC ENGINEERING , v.84 , 2007 , p.2032 View record at Web of Science 10.1016/j.mee.2007.04.08
(Showing: 1 - 10 of 23)

PROJECT OUTCOMES REPORT

Disclaimer

This Project Outcomes Report for the General Public is displayed verbatim as submitted by the Principal Investigator (PI) for this award. Any opinions, findings, and conclusions or recommendations expressed in this Report are those of the PI and do not necessarily reflect the views of the National Science Foundation; NSF has not approved or endorsed its content.



The goal of this proposal  was to develop a comprehensive theoretical framework for the emerging field of nanoscale epitaxial oxide semiconductor systems. These are novel hybrid nanostructures that combine properties of common semiconductors, such as silicon, with exotic functionalities such as ferromagnetism or ferroelectricity of transition metal oxides such as for example, BaTiO3. Such structures are expected to find applications
as new sensors, smarter electronic components, and novel optoelectronic devices.
The focus of the project was to identify through computer simulations key elements that enable the practical creation of these functional structures and thus aid the development of a new technology, and to explore new physical effects offered by these unusual systems. Keeping in mind technological applications of fundamental research was central to the spirit of this proposal. We have made significant contributions to the field of oxide/semiconductor epitaxy. The theoretical work, done under this project, enabled the PI to start the Materials Physics Laboratory, where many ideas developed through computer modeling are now being tested in practice
(http://www.ph.utexas.edu/~aadg/lab/index.html). These include integration of ferromagnetic and ferroelectric materials on silicon for applications in the transistor technology.  The first one may have application in spintronics,
where in addition to charge the spin of electron is used. And the second one may result in very low power transistors that are needed for mobile computing.
Another somewhat unexpected development is the integration of photocatalytic titanium dioxide on silicon with potential applications in water splitting by sunlight. The project supported studies of two doctoral students, two master students and one undergraduate student, who collectively published 37 research articles.


Last Modified: 01/28/2013
Modified by: Alexander Demkov

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