Award Abstract # 0304810
Alternative Chemistries for Barrier Materials in Cu Metallization

NSF Org: CHE
Division Of Chemistry
Recipient: UNIVERSITY OF FLORIDA
Initial Amendment Date: September 2, 2003
Latest Amendment Date: April 27, 2007
Award Number: 0304810
Award Instrument: Continuing Grant
Program Manager: Carol Bessel
cbessel@nsf.gov
 (703)292-4906
CHE
 Division Of Chemistry
MPS
 Directorate for Mathematical and Physical Sciences
Start Date: September 1, 2003
End Date: August 31, 2009 (Estimated)
Total Intended Award Amount: $2,367,000.00
Total Awarded Amount to Date: $2,418,490.00
Funds Obligated to Date: FY 2003 = $507,000.00
FY 2004 = $465,000.00

FY 2005 = $516,490.00

FY 2006 = $465,000.00

FY 2007 = $465,000.00
History of Investigator:
  • Lisa McElwee-White (Principal Investigator)
    lmwhite@chem.ufl.edu
  • Timothy Anderson (Co-Principal Investigator)
  • David Norton (Co-Principal Investigator)
Recipient Sponsored Research Office: University of Florida
1523 UNION RD RM 207
GAINESVILLE
FL  US  32611-1941
(352)392-3516
Sponsor Congressional District: 03
Primary Place of Performance: University of Florida
1523 UNION RD RM 207
GAINESVILLE
FL  US  32611-1941
Primary Place of Performance
Congressional District:
03
Unique Entity Identifier (UEI): NNFQH1JAPEP3
Parent UEI:
NSF Program(s): OFFICE OF MULTIDISCIPLINARY AC,
ELECTRONIC/PHOTONIC MATERIALS,
PROJECTS,
CHEMISTRY PROJECTS
Primary Program Source: app-0103 
app-0104 

app-0105 

app-0106 

app-0107 
Program Reference Code(s): 1589, 7202, 9161, 9162, AMPP
Program Element Code(s): 125300, 177500, 197800, 199100
Award Agency Code: 4900
Fund Agency Code: 4900
Assistance Listing Number(s): 47.049

ABSTRACT

Lisa McElwee-White, Department of Chemistry, Timothy J. Anderson, Department of Chemical Engineering, David P. Norton, Department of Materials Science and Engineering, all of the University of Florida, in collaboration with Steven W. Johnston, Intel Corporation, Sung Min Cho, Sungkyunkwan University, Korea, and Karin Pruessner, Materials Science and Engineering, University of Florida are funded with an award from the Collaborative Research in Chemistry Program with funds provided by the Division of Chemistry, the Division of Physics, the Division of Molecular, Cellular Biology and the Office of Multidisciplinary Activities. This multifaceted team will investigate new
diffusion barrier materials that are more stable toward copper diffusion than titanium nitride for future generations of integrated circuits. This collaborative project involves preparation of single source precursors for metal-organic chemical vapor deposition (MOCVD) and atomic layer deposition (ALD) of WNx followed by screening of the precursors, CVD and ALD growth studies, and characterization of the deposited material. Comparative studies of microstructure and Cu diffusion in MOCVD and physical vapor deposition (PVD) WNx films will allow evaluation of their potential in barrier applications.

A critical problem in the electronics industry, development of a suitable barrier material against Cu diffusion and a method of depositing it in high aspect ratio vias, will be investigated using a multidisciplinary approach This collaboration connects precursor chemistry development, deposition process refinement, materials characterization, computational modeling and device fabrication. The investigators will investigate WNx in addition to new materials. Students and postdoctoral associates will gain exposure to team-based training and problem solving skills that reach outside their own disciplines of graduate study. In addition, the interaction with Intel will broaden their perspectives beyond academic research. This collaboration has a history of diversity that reflects the local population. Activities such as educational module development and outreach to grade 8-12 girls will encourage participation by others in related areas of science.

PUBLICATIONS PRODUCED AS A RESULT OF THIS RESEARCH

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(Showing: 1 - 10 of 25)
Ajmera, HM; Anderson, TJ; Koller, J; McElwee-White, L; Norton, DP "Deposition of WNxCy thin films for diffusion barrier application using the dimethylhydrazido (2(-)) tungsten complex (CH3CN)Cl4W(NNMe2)" THIN SOLID FILMS , v.517 , 2009 , p.6038 View record at Web of Science 10.1016/j.tsf.2009.04.03
Ajmera, H.M.; Heitsch, A.T.; Anderson, T.J.; Wilder, C.B.; Reitfort, L.L.; McElwee-White, L.; Norton, D.P. "Deposition of WNxCy for Diffusion Barrier Application Using the Imido Guanidinato Complex W(NiPr)Cl3[iPrNC(NMe2)NiPr]" J. Vac. Sci. Technol. B , v.26 , 2008 , p.1800
Ajmera, H.M.; Heitsch, A.T.; Bchir, O.J.; Anderson, T.J.; Reitfort, L.L.; McElwee-White, L. "Deposition of WNxCy Using the Allylimido Complexes Cl4(RCN)W(NC3H5): Effect of NH3 on Film Properties" Journal of the Electrochemical Society , v.155 , 2008 , p.H829
Bchir, OJ; Green, KM; Ajmera, HM; Zapp, EA; Anderson, TJ; Brooks, BC; Reitfort, LL; Powell, DH; Abboud, KA; McElwee-White, L "Tungsten allylimido complexes Cl-4(RCN)W(NC3H5) as single-source CVD precursors for WNxCy thin films. Correlation of precursor fragmentation to film properties" JOURNAL OF THE AMERICAN CHEMICAL SOCIETY , v.127 , 2005 , p.7825 View record at Web of Science 10.1021/ja043799
Bchir, OJ; Green, KM; Hlad, MS; Anderson, TJ; Brooks, BC; McElwee-White, L "Tungsten nitride thin films deposited by MOCVD: sources of carbon and effects on film structure and stoichiometry" JOURNAL OF CRYSTAL GROWTH , v.261 , 2004 , p.280 View record at Web of Science 10.1016/j.jcrysgro.2003.11.01
Bchir, OJ; Kim, KC; Anderson, TJ; Craciun, V; Brooks, BC; McElwee-White, L "Effect of NH3 on film properties of MOCVD tungsten nitride from Cl-4(CH3CN)W((NPr)-Pr-i)" JOURNAL OF THE ELECTROCHEMICAL SOCIETY , v.151 , 2004 , p.G697 View record at Web of Science 10.1149/1.178941
Kim, D.; Kim, O.H.; Ajmera, H.M.; Anderson, T.J.; Koller, J.; McElwee-White, L. "Deposition of WNxCy from the Tungsten Piperidylhydrazido Complex Cl4(CH3CN)W(N-pip) as a Single-Source Precursor" ECS Transactions , v.25 , 2009 , p.541
Kim, D.;Kim, O. H.;Anderson, T. J.;Koller, J.;McElwee-White, L.;Leu, L. C.;Tsai, J. M.;Norton, D. P.; "Chemical Vapor Deposition of WNxCy using the Tungsten Piperidylhydrazido Complex Cl4(CH3CN)W(N-pip): Deposition, Characterization and Diffusion Barrier Evaluation" J. Vac. Sci. Technol. A , v.27 , 2009 , p.943
Koller, J.;Ajmera, H. M.;Abboud, K. A.;Anderson, T. J.;McElwee-White, L.; "Synthesis and Characterization of Diorganohydrazido(2-) Tungsten Complexes" Inorg. Chem. , v.47 , 2008 , p.4457-4462
Koller, J.;Ajmera, H. M.;Abboud, K. A.;Anderson, T. J.;McElwee-White, L.; "Synthesis and Characterization of Diorganohydrazido(2-) Tungsten Complexes" Inorg. Chem. , v.47 , 2008 , p.4457-4462
Koller, J; McElwee-White, L; Abboud, KA "An N-bridged tritungsten compound for the chemical vapor deposition of WNx thin films" ACTA CRYSTALLOGRAPHICA SECTION E-STRUCTURE REPORTS ONLINE , v.63 , 2007 , p.M2733 View record at Web of Science 10.1107/S160053680704903
(Showing: 1 - 10 of 25)

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