NSF Org:	ECCS Division of Electrical, Communications and Cyber Systems
Recipient:	SOUTHERN METHODIST UNIVERSITY
Initial Amendment Date:	May 15, 1998
Latest Amendment Date:	November 10, 1998
Award Number:	9732663
Award Instrument:	Standard Grant
Program Manager:	Filbert J. Bartoli ECCS  Division of Electrical, Communications and Cyber Systems ENG  Directorate for Engineering
Start Date:	June 1, 1998
End Date:	May 31, 2001 (Estimated)
Total Intended Award Amount:	$137,054.00
Total Awarded Amount to Date:	$137,054.00
Funds Obligated to Date:	FY 1998 = $127,054.00 FY 1999 = $10,000.00
History of Investigator:	Zeynep Celik-Butler (Principal Investigator) zbutler@uta.edu
Recipient Sponsored Research Office:	Southern Methodist University 6425 BOAZ ST RM 130 DALLAS TX  US  75205-1902 (214)768-4708
Sponsor Congressional District:	24
Primary Place of Performance:	Southern Methodist University 6425 BOAZ ST RM 130 DALLAS TX  US  75205-1902
Primary Place of Performance Congressional District:	24
Unique Entity Identifier (UEI):	D33QGS3Q3DJ3
Parent UEI:	S88YPE3BLV66
NSF Program(s):	EPMD-ElectrnPhoton&MagnDevices
Primary Program Source:	app-0198  app-0199
Program Reference Code(s):	0000, 9231, 9251, OTHR
Program Element Code(s):	151700
Award Agency Code:	4900
Fund Agency Code:	4900
Assistance Listing Number(s):	47.041

ABSTRACT

9732663
Celik-Bulter
The Semiconducting Research Corporation (SRC) has identified noise modeling of sub-micron Metal Oxide-Semiconductor Field-Effect Transistors (MOSFETs) as one of most urgent short term research needs for 1997-98. As devices shrink, frequencies increase, and voltages reduce, the need to understand the noise sources in new generation MOSFETs becomes more and more important in order to design and gavricate devices with acceptable performance characteristics. Noise models developed for large area devices based on the large-number-the device, beyond a certain limit of scaling down, with existing models, it becomes impossible to predict the noise performance of an individual transistor, specifically a MOSFET. The lack of accurate models leads the process and to significant waste of valuable time. There is a need to measure and understand the sources of noise(all kinds and wide frequency range) exhibited by deep-submicron MOSFETs.
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