Award Abstract # 2335504
SBIR Phase II: Thermally-optimized power amplifiers for next-generation telecommunication and radar

NSF Org: TI
Translational Impacts
Recipient: SOCTERA, INC.
Initial Amendment Date: March 6, 2024
Latest Amendment Date: March 6, 2024
Award Number: 2335504
Award Instrument: Cooperative Agreement
Program Manager: Ela Mirowski
emirowsk@nsf.gov
 (703)292-2936
TI
 Translational Impacts
TIP
 Directorate for Technology, Innovation, and Partnerships
Start Date: March 15, 2024
End Date: February 28, 2026 (Estimated)
Total Intended Award Amount: $1,000,000.00
Total Awarded Amount to Date: $1,000,000.00
Funds Obligated to Date: FY 2024 = $1,000,000.00
History of Investigator:
  • Austin Hickman (Principal Investigator)
    austin.hickman@soctera.com
Recipient Sponsored Research Office: SOCTERA, INC.
350F DUFFIELD HALL
ITHACA
NY  US  14853-2700
(304)208-2333
Sponsor Congressional District: 19
Primary Place of Performance: SOCTERA, INC.
350F DUFFIELD HALL
ITHACA
NY  US  14853-2700
Primary Place of Performance
Congressional District:
19
Unique Entity Identifier (UEI): ZZW9HEN52231
Parent UEI:
NSF Program(s): SBIR Phase II
Primary Program Source: 01002425DB NSF RESEARCH & RELATED ACTIVIT
Program Reference Code(s):
Program Element Code(s): 537300
Award Agency Code: 4900
Fund Agency Code: 4900
Assistance Listing Number(s): 47.084

ABSTRACT

This Small Business Innovation Research (SBIR) Phase II project enables the next generation of wireless communication that makes our world smarter and safer. The promise of 5G is to enable unprecedented connectivity - smart cars, smart homes, etc. The technology also promises equity of information in the form of broadband coverage across the United States. Thus far, the dream of 5G has been limited due to poor signal range and prohibitive cooling costs. This solution is a thermally-optimized power amplifier that dramatically increases signal range and stays cool - reducing costs. As a result of boosted signal range, broadband coverage will be incentivized in more rural areas, preventing the deepening of the digital divide. Lower costs enable next-generation connectivity between smart devices - such as that between cars which can dramatically lower motor vehicle accidents. Finally, the development and production of this technology, all within the United States, will contribute to the ongoing effort to revitalize the nation?s semiconductor industry.

This Small Business Innovation Research (SBIR) Phase II project focuses on the scaling and commercialization of an innovative power amplifier technology. State-of-the-art power amplifiers (PAs) are made of gallium nitride. In many cases, the performance of these PAs is thermally limited - they can't handle the heat they generate during operation. The result for wireless communication systems, such as 5G telecom and radar systems, is limited signal range and high cooling costs. By inserting a thin aluminum nitride layer in its semiconductor stack, the power amplifiers developed in this Phase II project will have significantly improved thermal management, resulting in increased efficiency and power handling capabilities. The resulting power amplifiers will reduce cooling cost and increase signal range, enabling next generation telecommunications and advanced radar systems. In this project, production will transition from the university lab to a scaled, commercial process. This transition will involve multiple rounds of power amplifier fabrication and assessment, as well as the formation and maintenance of key partnerships. The result of this project will be a demonstration of the minimum viable product at commercial scale.

This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

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