Award Abstract # 1944312
CAREER: Development of AlInN Nanostructures for Advanced Ultraviolet Light-Emitters

NSF Org: ECCS
Division of Electrical, Communications and Cyber Systems
Recipient: NEW JERSEY INSTITUTE OF TECHNOLOGY
Initial Amendment Date: December 16, 2019
Latest Amendment Date: June 14, 2021
Award Number: 1944312
Award Instrument: Continuing Grant
Program Manager: Margaret Kim
sekim@nsf.gov
 (703)292-2967
ECCS
 Division of Electrical, Communications and Cyber Systems
ENG
 Directorate for Engineering
Start Date: July 1, 2020
End Date: May 31, 2024 (Estimated)
Total Intended Award Amount: $500,000.00
Total Awarded Amount to Date: $500,000.00
Funds Obligated to Date: FY 2020 = $266,932.00
FY 2021 = $0.00
History of Investigator:
  • Hieu Nguyen (Principal Investigator)
    hieu.p.nguyen@ttu.edu
Recipient Sponsored Research Office: New Jersey Institute of Technology
323 DR MARTIN LUTHER KING JR BLVD
NEWARK
NJ  US  07102-1824
(973)596-5275
Sponsor Congressional District: 10
Primary Place of Performance: New Jersey Institute of Technology
323 Dr M.L.K. Jr. Blvd
Newark
NJ  US  07102-1982
Primary Place of Performance
Congressional District:
10
Unique Entity Identifier (UEI): SGBMHQ7VXNH5
Parent UEI:
NSF Program(s): EPMD-ElectrnPhoton&MagnDevices
Primary Program Source: 01002021DB NSF RESEARCH & RELATED ACTIVIT
01002122DB NSF RESEARCH & RELATED ACTIVIT
Program Reference Code(s): 1045, 095E, 091E
Program Element Code(s): 151700
Award Agency Code: 4900
Fund Agency Code: 4900
Assistance Listing Number(s): 47.041

ABSTRACT

Nontechnical description: This project aims to develop a new form of ultraviolet light-emitters. Through a detailed theoretical and experimental study of AlInN, this project will identify solutions for the growth of AlInN nanostructured ultraviolet light-emitters. The proposed new generation nanowire light-emitters are promising candidates in solid-state lighting sources, as part of data storage, high-speed communications, information processing, optical interconnects, optical recording sterilization/water purification, medicine and biochemistry, air purification equipment and zero emission automobiles. This research program will offer unique interdisciplinary research opportunities to students at New Jersey Institute of Technology (NJIT) to gain experience in epitaxial growth techniques, hands-on device fabrication and characterization of semiconductor devices. Located in Newark, New Jersey, NJIT has a diverse student populating with a large percentage of African-American, Hispanic and women students. This research program will provide strong opportunity to our undergraduate and graduate students. In addition, experiments related to this research program will be modified and introduced to the outreach program planned for K-12 students and teachers through the Center for Pre-college Program at NJIT. This research program encourages students from underrepresented groups, in particular women, minority candidates, veterans and individuals with disabilities to participate in developing new device applications of the III-nitride nanowire semiconductors. Furthermore, research activities will be developed throughout this CAREER program and will be introduced to students in the U.S. and globally to benefit the broader community.

Technical description: Significant progress has been made in the area of InGaN and AlGaN semiconductors for near ultraviolet and ultraviolet photonic devices, respectively. Nevertheless, the approach of using different III-nitride alloys for ultraviolet light-emitting diodes (LEDs) is relatively unexplored. This CAREER program will focus on fundamentals and quantitative understanding of the epitaxial growth and properties of AlxIn1-xN-based nanostructured ultraviolet LEDs operating in the wavelength range of 210 - 355nm. These nanowire ultraviolet LEDs will be grown by molecular beam epitaxy. The specific research will include: (1) design and simulation of novel nanowire LED structures and geometries; (2) fundamental investigation of the molecular beam epitaxial growth of AlInN nanowire ultraviolet LED structures; and (3) development of AlInN nanowire ultraviolet LEDs implementing unique structures. Detailed structure, optical, electrical, and reliability characterizations will be performed. This research program will enable a first demonstration of nanowire LEDs operating in the ultraviolet regime using AlInN nanostructures. The success of the proposed project will establish a foundation to develop high efficiency and high-power photonic and electronic devices that utilize the full potential of III-nitride nanostructures.

This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

PUBLICATIONS PRODUCED AS A RESULT OF THIS RESEARCH

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(Showing: 1 - 10 of 21)
Bui, HA Quoc and Velpula, Ravi Teja and Jain, Barsha and Nguyen, Hieu Pham "III-Nitride Based Narrow Band Far-UVC LEDs for Airborne and Surface Disinfection" ECS Transactions , v.98 , 2020 https://doi.org/10.1149/09806.0083ecst Citation Details
Bui, Ha_Quoc_Thang and Velpula, Ravi_Teja and Jian, Barsha and Philip, Moab_Rajan and Tong, Hien_Duy and Lenka, Trupti_Rajan and Nguyen, Hieu_Pham_Trung "High-performance nanowire ultraviolet light-emitting diodes with potassium hydroxide and ammonium sulfide surface passivation" Applied Optics , v.59 , 2020 https://doi.org/10.1364/AO.400877 Citation Details
Das, Samadrita and Lenka, Trupti Ranjan and Talukdar, Fazal Ahmed and Nguyen, Hieu_Pham Trung and Crupi, Giovanni "The role of indium composition in InxGa1xN prestrained layer towards optical characteristics of EBL free GaN / InGaN nanowire LEDs for enhanced luminescence" International Journal of Numerical Modelling: Electronic Networks, Devices and Fields , v.37 , 2024 https://doi.org/10.1002/jnm.3169 Citation Details
Das, Samadrita and Lenka, Trupti_Ranjan and Talukdar, Fazal_Ahmed and Sadaf, Sharif_Md and Velpula, Ravi_Teja and Nguyen, Hieu_Pham_Trung "Impact of a prestrained graded InGaN/GaN interlayer towards enhanced optical characteristics of a multi-quantum well LED based on silicon substrate" Applied Optics , v.61 , 2022 https://doi.org/10.1364/AO.470083 Citation Details
Das, Samadrita and Lenka, Trupti Ranjan and Talukdar, Fazal Ahmed and Velpula, Ravi Teja and Jain, Barsha and Nguyen, Hieu Pham and Crupi, Giovanni "Effects of polarized-induced doping and graded composition in an advanced multiple quantum well InGaN/GaN UV-LED for enhanced light technology" Engineering Research Express , v.4 , 2022 https://doi.org/10.1088/2631-8695/ac4fb1 Citation Details
Das, S and Lenka, T R and Talukdar, F A and Nguyen, H_P T "III-Nitride Nanowire LEDs for Enhanced Light Technology" , 2023 https://doi.org/10.1109/MIEL58498.2023.10315936 Citation Details
Jain, Barsha and Velpula, Ravi_Teja and Patel, Moulik and Nguyen, Hieu_Pham_Trung "Controlled carrier mean free path for the enhanced efficiency of III-nitride deep-ultraviolet light-emitting diodes" Applied Optics , v.60 , 2021 https://doi.org/10.1364/AO.418603 Citation Details
Jain, Barsha and Velpula, Ravi Teja and Patel, Moulik and Sadaf, Sharif Md. and Nguyen, Hieu Pham "Improved Performance of Electron Blocking Layer Free AlGaN Deep Ultraviolet Light-Emitting Diodes Using Graded Staircase Barriers" Micromachines , v.12 , 2021 https://doi.org/10.3390/mi12030334 Citation Details
Jain, Barsha and Velpula, Ravi_Teja and Tumuna, Moses and Bui, Ha_Quoc_Thang and Jude, Jeffrey and Pham, Thi_Tan and le, Thang_van and Hoang, Anh_Viet and Wang, Renjie and Nguyen, Hieu_Pham_Trung "Enhancing the light extraction efficiency of AlInN nanowire ultraviolet light-emitting diodes with photonic crystal structures" Optics Express , v.28 , 2020 https://doi.org/10.1364/OE.396788 Citation Details
Jain, Barsha and Velpula, Ravi_Teja and Velpula, Swetha and Nguyen, Hoang-Duy and Nguyen, Hieu_Pham_Trung "Enhanced hole transport in AlGaN deep ultraviolet light-emitting diodes using a double-sided step graded superlattice electron blocking layer" Journal of the Optical Society of America B , v.37 , 2020 https://doi.org/10.1364/JOSAB.399773 Citation Details
Jain, Barsha T. and Muthu, Manobalasankar and Velpula, Ravi Teja and Nguyen, Ngoc T. and Nguyen, Hieu Pham "Advantages of concave quantum barriers in AlGaN deep ultraviolet light-emitting diodes" Gallium Nitride Materials and Devices XVIII , v.12421 , 2023 https://doi.org/10.1117/12.2650411 Citation Details
(Showing: 1 - 10 of 21)

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