Award Abstract # 1810119
Design and growth of high entropy oxides with tailored ionic dynamics for memory and computing applications

NSF Org: DMR
Division Of Materials Research
Recipient: REGENTS OF THE UNIVERSITY OF MICHIGAN
Initial Amendment Date: July 3, 2018
Latest Amendment Date: July 3, 2018
Award Number: 1810119
Award Instrument: Standard Grant
Program Manager: Paul Lane
plane@nsf.gov
 (703)292-2453
DMR
 Division Of Materials Research
MPS
 Directorate for Mathematical and Physical Sciences
Start Date: July 15, 2018
End Date: June 30, 2022 (Estimated)
Total Intended Award Amount: $425,000.00
Total Awarded Amount to Date: $425,000.00
Funds Obligated to Date: FY 2018 = $425,000.00
History of Investigator:
  • Wei Lu (Principal Investigator)
    wluee@eecs.umich.edu
  • Jamie Phillips (Co-Principal Investigator)
  • Emmanouil Kioupakis (Co-Principal Investigator)
Recipient Sponsored Research Office: Regents of the University of Michigan - Ann Arbor
1109 GEDDES AVE STE 3300
ANN ARBOR
MI  US  48109-1015
(734)763-6438
Sponsor Congressional District: 06
Primary Place of Performance: University of Michigan Ann Arbor
1301 Beal Ave
Ann Arbor
MI  US  48109-2122
Primary Place of Performance
Congressional District:
06
Unique Entity Identifier (UEI): GNJ7BBP73WE9
Parent UEI:
NSF Program(s): ELECTRONIC/PHOTONIC MATERIALS
Primary Program Source: 01001819DB NSF RESEARCH & RELATED ACTIVIT
Program Reference Code(s): 6863, 8084, 8396, 8611, 9216
Program Element Code(s): 177500
Award Agency Code: 4900
Fund Agency Code: 4900
Assistance Listing Number(s): 47.049

ABSTRACT

Nontechnical Description: New materials that offer tailored electronic as well as ionic characteristics can fundamentally impact how electronic devices and circuits are designed and built. This project brings together both experimentalists and theorists to explore a new class of oxide material that offers well-controlled coupled electronic/ionic effects for the development of new memory and logic devices. Through fundamental theory analysis and experimental innovations, materials that do not exist naturally can be systematically designed, synthesized and utilized. The techniques developed in this project offer new toolboxes for fundamental materials design and research, and enable new device applications. This project provides comprehensive educational and training opportunities for graduate students and undergraduates. The team plans to incorporate knowledge and techniques developed during research into core technical courses in materials science and electrical engineering disciplines, and disseminate research results to the general public through publications, summer camps, class visits and online exhibits.

Technical Description: Previous studies on resistive switching memory devices are limited by oxide materials that are currently available. In this project, the team proposes to significantly broaden the parameter space of candidate materials that can lead to new material compositions and optimized device performance, by taking advantage of the concept that entropy can be used to stabilize new oxide phases. The multidiscipline team offers complementary expertise in theory, materials science, film growth and device engineering and aims to perform systematic study on high-entropy oxides and their applications in emerging electronic devices. The theoretical studies, including design of the high-entropy oxides with desired composition and stoichiometry, prediction of the kinetic (ionic hopping energy barrier and hopping distance) and thermodynamic (oxygen vacancy charge state) parameters, and transport and device-level modeling, provides guidance for the tightly integrated experimental studies including systematic materials synthesis, characterizations and device demonstrations and measurements to extract the relevant material parameters and verify the device performance. The synergistic co-development of these tasks not only enhances the likelihood of success of the proposed project, but also builds the foundation for other tasks where new, engineered materials can be developed.

This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

PUBLICATIONS PRODUCED AS A RESULT OF THIS RESEARCH

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Lee, Seung Hwan and Zhu, Xiaojian and Lu, Wei D. "Nanoscale resistive switching devices for memory and computing applications" Nano Research , v.13 , 2020 https://doi.org/10.1007/s12274-020-2616-0 Citation Details
Ahn, Minhyung and Park, Yongmo and Lee, Seung Hwan and Chae, Sieun and Lee, Jihang and Heron, John T. and Kioupakis, Emmanouil and Lu, Wei D. and Phillips, Jamie D. "Memristors Based on (Zr, Hf, Nb, Ta, Mo, W) HighEntropy Oxides" Advanced Electronic Materials , v.7 , 2021 https://doi.org/10.1002/aelm.202001258 Citation Details
Chae, S. and Mengle, K. A. and Lu, R. and Olvera, A. and Sanders, N. and Lee, J. and Poudeu, P. F. and Heron, J. T. and Kioupakis, E. "Thermal conductivity of rutile germanium dioxide" Applied Physics Letters , v.117 , 2020 https://doi.org/10.1063/5.0011358 Citation Details
Chae, Sieun and Williams, Logan and Lee, Jihang and Heron, John T. and Kioupakis, Emmanouil "Effects of local compositional and structural disorder on vacancy formation in entropy-stabilized oxides from first-principles" npj Computational Materials , v.8 , 2022 https://doi.org/10.1038/s41524-022-00780-0 Citation Details
Lee, Jihang and Schell, William and Zhu, Xiaojian and Kioupakis, Emmanouil and Lu, Wei D. "Charge Transition of Oxygen Vacancies during Resistive Switching in Oxide-Based RRAM" ACS Applied Materials & Interfaces , v.11 , 2019 10.1021/acsami.8b18386 Citation Details
Lee, Seung Hwan and Moon, John and Jeong, YeonJoo and Lee, Jihang and Li, Xinyi and Wu, Huaqiang and Lu, Wei D. "Quantitative, Dynamic TaO x Memristor/Resistive Random Access Memory Model" ACS Applied Electronic Materials , v.2 , 2020 10.1021/acsaelm.9b00792 Citation Details
Yoo, Sangmin and Wu, Yuting and Park, Yongmo and Lu, Wei D. "Tuning Resistive Switching Behavior by Controlling Internal Ionic Dynamics for Biorealistic Implementation of Synaptic Plasticity" Advanced Electronic Materials , v.8 , 2022 https://doi.org/10.1002/aelm.202101025 Citation Details
Zhu, Xiaojian and Lee, Seung Hwan and Lu, Wei D. "Nanoionic ResistiveSwitching Devices" Advanced Electronic Materials , v.5 , 2019 https://doi.org/10.1002/aelm.201900184 Citation Details

PROJECT OUTCOMES REPORT

Disclaimer

This Project Outcomes Report for the General Public is displayed verbatim as submitted by the Principal Investigator (PI) for this award. Any opinions, findings, and conclusions or recommendations expressed in this Report are those of the PI and do not necessarily reflect the views of the National Science Foundation; NSF has not approved or endorsed its content.

This project aims to develop a new class of material that does not exist naturally - high-entropy oxide (HEO) films, and explore its application in memory and neuromorphic computing systems. The team hypothesizes that by mixing a diverse group of oxides together, the increase in entropy can help stabilize the film during growth and prevent nonhomogeneity effects that typically occur in multi-oxide film growth. The ability to control the material composition can in turn lead to desired ?cocktail? effects and optimized resistive switching (RS) properties that cannot be obtained from simple oxide systems. This approach can allow systematic tuning of the material parameters for a broad range of applications including resistive random-access memory (RRAM) and neuromorphic computing systems.

 

Three well-defined and tightly integrated tasks have been carried out, following the proposed research plan. Task 1: first principles simulation of the HEO systems to reveal how the different material parameters affect the RS process, and how these parameters can be systematically tuned by controlling the composition of the HEO systems; Task 2: growth of the HEO films and characterization of the film composition and microstructure; and Task 3: device fabrication and characterization to experimentally verify systematic tuning of the RS behaviors, and prototype memory device and neuromorphic computing hardware developments.

 

During the past 4 years, the PIs and their students have made significant progress in the proposed tasks, and obtained the following outcomes:

 

1)     We performed hybrid density-functional theory (DFT) calculations to obtain the electronic structure of amorphous HEOs with varied composition. We analyzed the effects of stoichiometry on the cation charge state, which explains the experimental results. We also combined high-throughput DFT calculations with linear regression algorithms to investigate the effects of local configurational and structural disorder on the thermodynamics of vacancy formation in HEOs and their influence on the electrical properties. Our results demonstrate that tuning the local chemistry and associated structural distortions by varying alloy composition acts an engineering principle that enables controlled defect formation in multi-component alloys. These results were reported in J. Lee et al. ACS Appl. Mater. Interfaces, 11, 11579-11586 (2019), and S. Chae, et al. NPJ Computational Materials 8, 95 (2022).

2)     We successfully demonstrated the growth of HEO materials composed of Zr, Hf, Nb, Ta, Mo, and W oxides. This multielement oxide material provides uniform distribution and higher concentration of oxygen vacancies, limiting the stochastic behavior in typical RS devices. Memory devices based on these materials manifest the ?cocktail effect?, exhibiting desired retention and gradual conductance modulation. Electrical characterization of these high-entropy-oxide-based memristors demonstrates forming-free operation, low device and cycle variability, gradual conductance modulation, 6-bit operation, and long retention which are promising for neuromorphic applications. These results were reported in M. Ahn, et al., Advanced Electronic Materials 7, 2001258 (2021).

 3)     We built physics-based models that incorporate detailed ionic drift/diffusion, electrical conduction, and thermal generation/dissipation processes for device modeling and optimization. By leveraging the internal dynamics, we showed the devices can natively implement learning rules such as spike-timing dependent plasticity (STDP) with controlled time-constants, and improved RS characteristics. These results were reported in S. Lee et al., ACS Applied Electronic Materials, 2, 3, 701-709 (2020)

 4)     Leveraging the controlled internal dynamics, we demosntrated prototype neuromorphic computing hardware that can efficiently detect correlation in the input data in an unsupervised fashion, and reservoir computing systems that can efficiently perform time-series analysis. These results were published in S. Yoo et al, Advanced Electronic Materials, 2101025 (2022). 

 

The outcomes have been broadly disseminated to the research community and the general public. The PIs and their students have published 8 papers in prestigious journals, and given invited talks at major internal conferences on findings of this project. 4 Ph.D. students have been systematically trained based on funding from NSF. The findings have also been incorporated in two graduate-level course the PIs developed, and shared with the general public through publications, presentations, and online resources. Several new research directions have been established, and hardware and software infrastructure has been developed during the project.  The findings have also inspired several new students who have since become actively engaged in research in related topics.

 


Last Modified: 07/25/2022
Modified by: Wei Lu

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