| NSF Org: |
DMR Division Of Materials Research |
| Recipient: |
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| Initial Amendment Date: | March 22, 2018 |
| Latest Amendment Date: | May 7, 2020 |
| Award Number: | 1762971 |
| Award Instrument: | Continuing Grant |
| Program Manager: |
Birgit Schwenzer
bschwenz@nsf.gov (703)292-4771 DMR Division Of Materials Research MPS Directorate for Mathematical and Physical Sciences |
| Start Date: | July 1, 2018 |
| End Date: | June 30, 2021 (Estimated) |
| Total Intended Award Amount: | $420,000.00 |
| Total Awarded Amount to Date: | $420,000.00 |
| Funds Obligated to Date: |
FY 2019 = $140,000.00 FY 2020 = $140,000.00 |
| History of Investigator: |
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| Recipient Sponsored Research Office: |
450 JANE STANFORD WAY STANFORD CA US 94305-2004 (650)723-2300 |
| Sponsor Congressional District: |
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| Primary Place of Performance: |
Stanford CA US 94305-4008 |
| Primary Place of
Performance Congressional District: |
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| Unique Entity Identifier (UEI): |
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| Parent UEI: |
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| NSF Program(s): | CERAMICS |
| Primary Program Source: |
01001920DB NSF RESEARCH & RELATED ACTIVIT 01002021DB NSF RESEARCH & RELATED ACTIVIT |
| Program Reference Code(s): | |
| Program Element Code(s): |
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| Award Agency Code: | 4900 |
| Fund Agency Code: | 4900 |
| Assistance Listing Number(s): | 47.049 |
ABSTRACT
NON-TECHNICAL DESCRIPTION: Semiconductor materials have formed the foundation of microelectronic devices that drive a wide range of technologies, including information technology, energy applications and national security. In an effort to improve energy efficiency and performance of existing microelectronics, semiconductors with strong magnetic responses, or ferromagnetic semiconductors, have been recognized as a possible alternative to current non-magnetic semiconductors. This project addresses the challenge of identifying and developing a new class of ferromagnetic semiconductors to enable improvements in energy efficiency and performance. One class of promising ferromagnetic semiconductors is based on a class of oxide thin films based on Sn, known as perovskite stannates. The research involves the design, synthesis, and characterization of stannate thin films with strong magnetic response. Additional research activities include the training of undergraduate and graduate researchers, including underrepresented minorities, who are likely to find future employment in the information technology sector.
TECHNICAL DETAILS: This integrated research and education program is focused on the development of a new class of spin-polarized semiconductors in epitaxial stannate oxide thin films through incorporation of magnetic dopants. Research activities include unique approaches to magnetic doping, including incorporating concentrations of magnetic dopants beyond the solubility limits at thermal equilibrium and co-doping on both types of cation sites. This research is timely as it exploits the recent development of high mobility epitaxial stannate films and it may provide an avenue to a room temperature ferromagnetic semiconductor that could make spin-based semiconductor electronics a reality and may revolutionize the microelectronics industry. Education aspects of this project include the training of undergraduate and graduate students, and the development of an apprenticeship and modular materials physics curricular program for local high school students.
This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
PUBLICATIONS PRODUCED AS A RESULT OF THIS RESEARCH
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PROJECT OUTCOMES REPORT
Disclaimer
This Project Outcomes Report for the General Public is displayed verbatim as submitted by the Principal Investigator (PI) for this award. Any opinions, findings, and conclusions or recommendations expressed in this Report are those of the PI and do not necessarily reflect the views of the National Science Foundation; NSF has not approved or endorsed its content.
This project has provided research opportunities for a graduate student to develop new semiconducting thin film materials that are both transparent and magnetic as well as training opportunities for high school students during the summer and the graduate student throughout the year. As the demands on current microelectronics for faster operation, smaller footprint and increased functionality continues, there is a need to develop new materials that provide new functionality. Materials with transparency, conductivity and magnetism would be a novel combination of functionalities. As a first step towards such multi-functionality, this project has sought to realize magnetism in the transparent semiconductor barium stannate BaSnO3. BaSnO3 has already been identified as a complex oxide semiconductor material that can be modified into a transparent conductor. During the three-year project, magnetic dopants of Pr, Nd, Gd and Ru have been individually doped into BaSnO3 thin films. The rare earth elements of Pr, Nd and Gd are substituted into the Ba site while the Ru is substituted into the Sn site. These modified BaSnO3 thin films have excellent structural quality and exhibit a magnetic response that corresponds well to the presence of the magnetic elements. These films also show excellent transparency in the visible wavelengths. Together these results make these materials promising for a new kind of microelectronics. In terms of educational and training opportunities, this project has funded a full-time graduate student and provided the infrastructure for two high school internships during the three summers. High school interns participate in a program where we have a series of tutorials followed by hands-on activities learning about the magnetic thin film growth and characterization.
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Last Modified: 10/01/2021
Modified by: Yuri Suzuki
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