Award Abstract # 1611231
Collaborative Research: A Roadmap Toward Terahertz Optoelectronics Using Active Control of Charge Density Waves at Degenerate Semiconductor Interfaces

NSF Org: ECCS
Division of Electrical, Communications and Cyber Systems
Recipient: UNIVERSITY OF TEXAS AT AUSTIN
Initial Amendment Date: August 17, 2016
Latest Amendment Date: August 17, 2016
Award Number: 1611231
Award Instrument: Standard Grant
Program Manager: Lawrence Goldberg
ECCS
 Division of Electrical, Communications and Cyber Systems
ENG
 Directorate for Engineering
Start Date: September 1, 2016
End Date: August 31, 2020 (Estimated)
Total Intended Award Amount: $255,000.00
Total Awarded Amount to Date: $255,000.00
Funds Obligated to Date: FY 2016 = $255,000.00
History of Investigator:
  • Daniel Wasserman (Principal Investigator)
    dw@utexas.edu
Recipient Sponsored Research Office: University of Texas at Austin
110 INNER CAMPUS DR
AUSTIN
TX  US  78712-1139
(512)471-6424
Sponsor Congressional District: 25
Primary Place of Performance: University of Texas at Austin
101 East 27th St., Suite 5.300
Austin
TX  US  78712-1532
Primary Place of Performance
Congressional District:
25
Unique Entity Identifier (UEI): V6AFQPN18437
Parent UEI:
NSF Program(s): EPMD-ElectrnPhoton&MagnDevices
Primary Program Source: 01001617DB NSF RESEARCH & RELATED ACTIVIT
Program Reference Code(s): 100E
Program Element Code(s): 151700
Award Agency Code: 4900
Fund Agency Code: 4900
Assistance Listing Number(s): 47.041

ABSTRACT

The information revolution of the past decades has been driven by unprecedented advances in microprocessor technology and a continuous progression towards smaller, faster and more efficient electronic devices. As a result, remarkable new capabilities have been enabled across vastly different areas of human activity such as telecommunication, computation, finances, national security and space exploration. Despite this progress, the past few years has seen scaling issues associated with electronic interconnect delay times and heat dissipation result in the saturation of microprocessor clock speeds at about 3GHz. Photonic integrated circuits, being the analogue of electronic circuits but with photons substituting for electrons as the information carrier, possess an exceedingly high data-carrying capacity and have the potential to address some of the present bottlenecks in microprocessor technology. However, the dielectric waveguides and interconnects currently used in photonic circuits are limited in size by the fundamental law of diffraction, leading to dimensional mismatch between electronic and photonic components. As a result, their practical implementation in real-world devices, apart from telecommunications, has been substantially hindered. Here we propose a new data processing element, an optoelectronic switch, which assimilates the best characteristics of photonics and electronics. It has the potential to address the current information bandwidth limitations of electronic devices, while simultaneously enabling device sizes that are substantially smaller than traditional photonic elements. A significant impact of this work will be the fostering of cutting-edge research opportunities for graduate and undergraduate students, including from underrepresented groups, implementing a new teaching methodology and pursuing a broader outreach by engaging high school children with fascinating topics in math and sciences.

This proposal seeks to develop a new optoelectronic device, referred to as Surface Plasmon Diode, with operation based on active control of charge-density waves propagating at heavily doped (degenerate) semiconductor interfaces. A synergy between theory and experiment will be pursued to gain insight into the complex multi-physics phenomena behind the device operation, including charge transport and recombination at high-gradient, heavily doped pn+- junctions, spatially and time dependent local permittivity variations at the semiconductor interfaces, and thermal effects due to Ohmic heating and electromagnetic energy dissipation. The experimental efforts will lead to Proof of Concept devices based on Silicon-on-Insulator and epitaxially-grown III-V semiconductor materials and compounds. Bulk material growth/fabrication and characterization will inform the theoretical modeling, which in turn will guide the fabrication and experimental characterization of the prototype. The transient response of the devices will be tested using a direct detection method (IR-detector) for modulation rates ranging from low (kHz) to moderate and high frequencies (few MHz up to 3GHz). For data rates higher than 3GHz a new on-chip electro-optical detection will be implemented. These experimental measurements, in conjunction with the theory, will establish the physical limitations and scaling laws governing the device 3dB bandwidth, and establish a clear roadmap toward direct, electro-optical signal modulation at rates down to the picosecond time scale for signal modulation surpassing -10dB and mode sizes that are substantially smaller compared to present-day optoelectronics elements. The proposed research presents a new approach toward fast optical interconnects, circuitry and logic elements and may lead to breakthrough technologies related to integrated optics and electronics, a multibillion dollar industry.

PUBLICATIONS PRODUCED AS A RESULT OF THIS RESEARCH

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Raj K. Vinnakota, Zuoming Dong, Andrew F. Briggs, Seth R. Bank, Daniel Wasserman, and Dentcho A. Genov "Plasmonic electro-optic modulator based on degenerate semiconductor interfaces" Nanophotonics , v.9 , 2020 , p.1105 https://doi.org/10.1515/nanoph-2019-0518
Z. Dong, A. Briggs, L. Nordin, R. K. Vinnakota, D. A. Genov, S. Bank, and D. Wasserman "Electrical Modulation of Degenerate Semiconductor Plasmonic Interfaces" Journal of Applied Physics , v.126 , 2019 , p.043101 10.1063/1.5108905
Z. Dong, R.K. Vinnakota, A.F. Briggs, L. Nordin, S.R. Bank, D.A. Genov, and D. Wasserman, "Electrical modulation of degenerate semiconductor plasmonic interfaces" Journal of Applied Physics , v.126 , 2019 , p.043101 https://doi.org/10.1063/1.5108905

PROJECT OUTCOMES REPORT

Disclaimer

This Project Outcomes Report for the General Public is displayed verbatim as submitted by the Principal Investigator (PI) for this award. Any opinions, findings, and conclusions or recommendations expressed in this Report are those of the PI and do not necessarily reflect the views of the National Science Foundation; NSF has not approved or endorsed its content.

This project has advanced a comprehensive multi-physics study of the complex physics phenomena behind the excitation and electro-optical control of charge density waves, i.e. Surface Plasmon Polaritons (SPPs), at high-gradient, heavily doped semiconductor PN+-junctions. A step-by-step process is implemented in which theory is matched to a set of control experiments, providing the critical data needed to refine and develop a unique Surface Plasmon Diode (SPD). In the design phase of this project, two Figures of Merit (FoM) have been used to characterize the tradeoff between the SPP propagation losses and mode confinement for operation frequencies in the mid- to far-IR spectral range and semiconducting materials and compounds consistent with the experimental capabilities. Comprehensive steady-state and time-dependent I/O studies has led to in-depth understanding of the unique switching mechanism behind the SPD, and have helped to guide and accelerate the development of a prototype. The experimental efforts have led to Proof of Concept devices based on highly doped Silicon-on-Insulator (SOI) and lattice matched In0.53Ga0.47As materials systems. Bulk material growth/fabrication and characterization was used to inform the theoretical model, which in turn guides the fabrication and experimental characterization of the prototype. This multi-pronged approach was accomplished through an iterative process in which devices with added complexity are manufactured and tested, seeking to refine the SPD design for improved operation. The steady-state and transient response of the prototypes has be experimentally tested using a direct detection method (IR-detector) for modulation rates ranging from low (kHz) to moderate and high frequencies (hundreds of MHz). These experimental measurements, in conjunction with the theory, have defined the physical limitations and scaling laws governing the SPD operation establishing a clear roadmap toward direct, electro-optical signal modulation at rates from a few kHz up to 10GHz.

The training of future engineers, scientists and educators was an integral component of this project. Those that have been affected include undergraduate and graduate students at the PI?s Institutions; STEM underrepresented minority students at Louisiana Tech University (LA Tech) and K-12 students and teachers in the State of Louisiana and Texas. As part of this project?s broader impact, the LA Tech group has reached out to K-12 students and educators through the Speaking of Science (SoS) outreach program. The SoS is managed by the Louisiana Experimental Program to Stimulate Competitive Research (LA EPSCoR) and aims to increase public awareness and showcase the State?s leading scientists and their cutting-edge research to K-12 institutions and the general public. As part of this program the LA Tech group has presented lecture-demo series entitled ?The Magic of Science or How to Make the Harry Potter Invisibility Cloak? at low performing, high minority, and high poverty schools throughout the State of Louisiana. The presentations focused on explaining to the attending students and teachers the basic physics principles behind ?why we see? and how these principles can be used to make objects invisible to the naked eye. Furthermore, three sets of hand-on demonstrations were performed showcasing invisibility due to camouflage, refractive index matching and total internal reflection. In total 20 lectures, demonstrations and workshops were delivered in front of more than 380 students, 48 teachers and 12 parents. The UT group has reached out to the local Austin K-12 community, developing and performing outreach activities and modular exercises in local schools and at UT outreach events. The UT group participated in the UT Girl Day event twice over the course of the program. All of the group?s graduate students worked to assemble a hands-on activity entitled ?Painting with Heat?, where visitors to the group?s set-up were able to paint with hot or cold water on a canvas and view the thermal image of their painting projected to a screen in real time. The PI and graduate students worked with the K-12 visitors to explain the concept of thermal energy and thermal imaging. In addition, the UT group has participated in the CDCM MRSEC?s RET program, working with a local elementary school teacher over the summer of 2019 to develop new hands-on activities for the classroom. 

Figure (A) Transfer magnetic (TM) and transfer electric (TE) reflectivity spectra of the In0.53Ga0.47As grating device (see insert) under zero bias. The experimental data (solid-lines) is compared to self-consistent electro-optic simulations (dashed lines). The local magnetic and electric field intensities across the device for the two incident light polarizations; (B-D) transverse magnetic and (C, E) transverse electric. The electromagnetic mode profiles unambiguously shows the excitation of SPP at the PN++- junction interface for incident wavelength of .


Last Modified: 09/30/2020
Modified by: Daniel Wasserman

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