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New Technique Boosts High-power Potential for Gallium Nitride Electronics


February 2, 2011

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Gallium nitride (GaN) material holds promise for emerging high-power devices that are more energy efficient than existing technologies--but these GaN devices traditionally break down when exposed to high voltages. Now researchers at North Carolina State University have solved the problem, introducing a buffer that allows the GaN devices to handle 10 times greater power.Full Story

Source
North Carolina State University

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