Award Abstract # 1465243
PFI:AIR - TT: Application Specific Data Acquisition Using High Temperature Silicon Carbide CMOS

NSF Org: TI
Translational Impacts
Recipient: UNIVERSITY OF ARKANSAS
Initial Amendment Date: April 9, 2015
Latest Amendment Date: July 8, 2016
Award Number: 1465243
Award Instrument: Standard Grant
Program Manager: Jesus Soriano Molla
jsoriano@nsf.gov
 (703)292-7795
TI
 Translational Impacts
TIP
 Directorate for Technology, Innovation, and Partnerships
Start Date: May 1, 2015
End Date: September 30, 2017 (Estimated)
Total Intended Award Amount: $200,000.00
Total Awarded Amount to Date: $257,553.00
Funds Obligated to Date: FY 2015 = $200,000.00
FY 2016 = $57,553.00
History of Investigator:
  • Homer Mantooth (Principal Investigator)
    mantooth@uark.edu
  • Jia Di (Co-Principal Investigator)
  • Matt Francis (Co-Principal Investigator)
  • Ian Getreu (Co-Principal Investigator)
Recipient Sponsored Research Office: University of Arkansas
1125 W MAPLE ST STE 316
FAYETTEVILLE
AR  US  72701-3124
(479)575-3845
Sponsor Congressional District: 03
Primary Place of Performance: University of Arkansas
Bell 3175
Fayetteville
AR  US  72701-1201
Primary Place of Performance
Congressional District:
03
Unique Entity Identifier (UEI): MECEHTM8DB17
Parent UEI:
NSF Program(s): GOALI-Grnt Opp Acad Lia wIndus,
Accelerating Innovation Rsrch
Primary Program Source: 01001516DB NSF RESEARCH & RELATED ACTIVIT
01001617DB NSF RESEARCH & RELATED ACTIVIT
Program Reference Code(s): 116E, 8019, 9150, 9251
Program Element Code(s): 150400, 801900
Award Agency Code: 4900
Fund Agency Code: 4900
Assistance Listing Number(s): 47.084

ABSTRACT

This PFI: AIR Technology Translation project focuses on translating silicon carbide (SiC) integrated circuit technology to fill the need for extreme environment electronics, which, in turn, facilitates improvements in energy efficiency and enables new system architectures for mobile transportation systems. Within the broader scope of integrated circuitry, analog-to-digital and digital-to-analog converters are the subject of this activity. High temperature SiC analog-to-digital data converters (SiC ADCs) are important because they can reside within an internal combustion engine or electric vehicle engine and convert analog sensor data to a digital form before transmission to the vehicle?s control computer. This will have the impact of increasing data rates, improving signal integrity, reducing shielding requirements on cabling, and enabling the potential for wireless transmission of data in the future. The project will result in a prototype of a SiC-based data acquisition system (DAQ) for extreme environment applications utilizing SiC ADCs. The SiC DAQ system has the main unique feature that it can survive very high temperatures (> 300°C). This provides the advantage of being able to sense and convert key data parameters in-situ at temperatures exceeding 300°C, a capability not currently available, which will improve the reliability and fuel efficiency for all types of vehicles (planes, trains, automobiles).

The design and manufacture of SiC materials for uses outside of simple power devices requires new design for manufacturing (DFM) techniques. This project addresses the following technology gaps as it translates from research discovery towards commercial application: 1) to understand and mitigate the manufacturing variability of SiC-CMOS (complementary metal oxide semiconductor); and 2) to qualify the reliability of a full-scale component. To do this, the team will assemble a demonstration unit that has sufficient capability to illustrate the potential for the technology while being sufficiently simple to support extensive test and characterization for reliability in a real world application. In addition, personnel involved in this project, masters and doctoral students in electrical engineering, will receive first-hand technology translation experience through the design activities undertaken that proceed from the feasibility to prototype phase with serious consideration of the eventual product.

The project engages Ozark Integrated Circuits of Fayetteville, Arkansas in guiding the commercialization aspects of the technology as it transitions from feasibility proof to prototype in this technology translation effort from research discovery toward commercial reality.

PUBLICATIONS PRODUCED AS A RESULT OF THIS RESEARCH

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A. Rahman, A.M. Francis, S.K. Akula, S. Ahmed, J. Holmes, H.A. Mantooth "High Temperature Voltage and Current References in CMOS Silicon Carbide" IEEE Transactions on Electron Devices , v.63 , 2016 , p.2455
A. Rahman, S. Roy, R. C. Murphree, H. A. Mantooth, A. M. Francis, and J. Holmes "?A SiC 8 Bit DAC at 400C,?" 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) , 2015 , p.pp. 241-2
A. Rahman, S. Roy, R. Murphree, R. Kotecha, K. Addington, A. Abbasi, H. A. Mantooth, A. M. Francis, J. Holmes, J. Di ""High-Temperature SiC CMOS Comparator and op-amp for Protection Circuits in Voltage Regulators and Switch-Mode Converters""  IEEE Journal of Emerging and Selected Topics in Power Electronics , v.Vol. 4 , 2016 , p.pp. 935-9
Ashfaqur Rahman, Landon Caley, Sajib Roy, Nathan Kuhns, Alan Mantooth, Jia Di, Anthony M. Francis,  Jim Holmes ""High Temperature Data Converters in Silicon Carbide CMOS"" IEEE Transactions on Electron Devices , v.vol. 64 , 2017 , p.pp. 1426-
N. Kuhns, L. Caley, A. Rahman, S. Ahmed, J. Di, H. A. Mantooth, A. M. Francis, J. Holmes ""Complex High-Temperature CMOS Silicon Carbide Digital Circuit Designs"" IEEE Transactions on Device and Materials Reliability , v.Vol. 1 , 2016 , p.pp. 105-1
Rahman, K. Addington, M. Barlow, S. Ahmed, H. A. Mantooth, and A. M. Francis "?A high temperature comparator in CMOS SiC,?" 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) , 2015 , p.pp. 236?2
S. Roy, R. C. Murphee, A. Abbasi, A. Rahman, H. A. Mantooth, J. Di, A. M. Francis, J. Holmes "Implementation of a digitally controlled SiC CMOS PWM generator using a tunable current-starved delay generator for high-temperature switched-mode regulators" 2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) , 2016 , p.210 10.1109/WiPDA.2016.7799939
S. Roy, R. C. Murphree, A. Abbasi, A. Rahman, A. Gattis, S. Ahmed, A. M. Francis, J. Holmes, H. A. Mantooth, J. Di "A SiC CMOS Digitally Controlled PWM Generator for High-Temperature Applications" IEEE Trans. on Industrial Electronics , v.64 , 2017 , p.8364 0278-0046

PROJECT OUTCOMES REPORT

Disclaimer

This Project Outcomes Report for the General Public is displayed verbatim as submitted by the Principal Investigator (PI) for this award. Any opinions, findings, and conclusions or recommendations expressed in this Report are those of the PI and do not necessarily reflect the views of the National Science Foundation; NSF has not approved or endorsed its content.

There is an increasing demand for electronics which can operate at high temperatures. Conventional system designs would require bulky and expensive cooling systems to achieve reliable operation of the circuits in the systems. Alternatively, there are materials such as silicon carbide (SiC) and gallium nitride (GaN) which can be used to fabricate discrete circuits and even entire systems which can operate at temperatures in excess of 300 °C. Areas such as industrial control, power generation, aerospace, and automotive electronics could be greatly advanced by the development of such technology. This project saw the successful design of a SiC data acquisition (DAQ) system which combined multiple circuits which have been tested at extreme temperatures. While the system would be useful in a variety of applications, a prototype was tested with a UV sensor to collect data from combustion diesel engines which has large implications for the advancement of the automotive industry. If the performance of an engine can be monitored in real-time, steps can be taken to improve its performance and efficiency.

The project capitalized on previous successes in designing building block integrated circuits in silicon carbide. The logical next step was to design a system which combined multiple circuits. A crucial part of many applications is the ability to take and then transmit data which can be read and analyzed in order to improve functionality of the system. In high temperature applications some components of the data acquisition system may have to be located some distance from the sources of the sensed data in order to operate at a lower temperature. With an all-SiC DAQ, the quality and reliability of the data can be improved by moving the circuitry closer to the source. In the example of a diesel engine, the sensor and DAQ can be located very close to the combustion site which provides more accurate data. This increase in reliability and fidelity would not only improve the automotive industry but would also provide for great gains in other high temperature applications as well.

The DAQ prototype was built and each of the SiC components were tested at temperatures of 400 °C or greater. The entire system was tested in the lab, but it was also successfully tested with data taken from an actual diesel engine using a SiC UV sensor. The system consisted of multiple SiC circuits which can be combined in the future into a single system on a chip. The data was sensed, amplified, converted into digital data and transmitted in a common data protocol, all using silicon carbide circuits. This makes for a large step toward reliable high-temperature real-time measurement capabilities.

This project also provided for the opportunity for undergraduate as well as graduate students to work with industry professionals. Professional engineers provided training for students from a variety of backgrounds while getting the chance to move an important technology closer towards a commercial product. These interactions will pay off in the future of those students’ careers, the development of the research laboratory and the success of the industry partner. A student connected with this project was hired by the commercial partner. Overall, this project resulted in technology which will benefit a variety of extreme environment fields and developed new engineers with increased knowledge of how to solve relevant problems in our society.

 


Last Modified: 01/31/2018
Modified by: Homer A Mantooth

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